Pressure Sensors, How They Work
The ELDEC Silicon On Sapphire (SOS) design incorporates silicon strain gauges
configured as a fully active 4-arm bridge molecularly bonded to a sapphire
diaphragm. Applied pressure induces strain resulting in a differential output
voltage proportional to excitation and applied pressure. This construction takes
advantage of material properties to provide a superior pressure measuring
device. In the ELDEC pressure sensor, a separate temperature sensing resistor,
isolated from pressure effects, is located directly on the sapphire pressure
measuring diaphragm. This integral temperature sensor allows ratiometric
temperature compensation for highest accuracy.

General Characteristics
CHARACTERISTIC |
RANGE |
Pressure bridge resistance |
4,500 ohms nominal |
Excitation voltage |
10 volts nominal |
Temperature Sensor |
10,000 ohms nominal |
Size |
One inch dia. for 15 to 500 psi F.S. |
Packaging |
To suit, contact ELDEC |
|